LTC1155 Datasheet

• Fully Enhances N-Channel Power MOSFETs
• 8μA Standby Current
• 85μA ON Current
• Short-Circuit Protection
• Wide Power Supply Range: 4.5V to 18V
• Controlled Switching ON and OFF Times
• No External Charge Pump Components
• Replaces P-Channel High Side MOSFETs
• Compatible with Standard Logic Families
• Available in 8-Pin SO Package

• Laptop Power Bus Switching
• SCSI Termination Power Switching
• Cellular Phone Power Management
• P-Channel Switch Replacement
• Relay and Solenoid Drivers
• Low Frequency Half H-Bridge
• Motor Speed and Torque Control

The LTC1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micropower operation, with 8μA standby current and 85μA operating current, allows use in virtually all systems with maximum efficiency.

Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps.

The LTC1155 operates off of a 4.5V to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micropower “sleep” operation is required.

The LTC1155 is available in both 8-pin PDIP and 8-pin SO packages.