LT1158 Datasheet

• Drives Gate of Top Side MOSFET Above V⁺
• Operates at Supply Voltages from 5V to 30V
• 150ns Transition Times Driving 3000pF
• Over 500mA Peak Driver Current
• Adaptive Non-Overlap Gate Drives
• Continuous Current Limit Protection
• Auto Shutdown and Retry Capability
• Internal Charge Pump for DC Operation
• Built-In Gate Voltage Protection
• Compatible with Current-Sensing MOSFETs
• TTL/CMOS Input Levels
• Fault Output Indication

• PWM of High Current Inductive Loads
• Half Bridge and Full Bridge Motor Control
• Synchronous Step-Down Switching Regulators
• Three-Phase Brushless Motor Drive
• High Current Transducer Drivers
• Battery-Operated Logic-Level MOSFETs

A single input pin on the LT1158 synchronously controls two N-channel power MOSFETs in a totem pole configuration. Unique adaptive protection against shoot-through currents eliminates all matching requirements for the two MOSFETs. This greatly eases the design of high efficiency motor control and switching regulator systems.

A continuous current limit loop in the LT1158 regulates short-circuit current in the top power MOSFET. Higher start-up currents are allowed as long as the MOSFET V_DS does not exceed 1.2V. By returning the FAULT output to the enable input, the LT1158 will automatically shut down in the event of a fault and retry when an internal pull-up current has recharged the enable capacitor.

An on-chip charge pump is switched in when needed to turn on the top N-channel MOSFET continuously. Special circuitry ensures that the top side gate drive is safely maintained in the transition between PWM and DC operation. The gate-to-source voltages are internally limited to 14.5V when operating at higher supply voltages.