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HMC329LC3B Datasheet

HMC329LC3B Datasheet

GaAs MMIC fundamental mixer surface mount technology (SMT), 24 GHz to 32 GHz
Part No.: HMC329LC3B
Page: 6 Pages
Size: 264 KB
Manufacturer: Analog Devices, Inc.
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Views: 0
Update Time: 2025-04-29 14:12:54
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HMC329LC3B Datasheet Applicable Part

Part No. Packaging SPQ Marking MSL Pins Temp Range Package Description Buy
HMC329LC3B Cut Tape 500   3 12 -55°C ~ 85°C 12-Lead LCC (3mm x 3mm w/ EP)  
HMC329LC3BTR Reel 500   3 12 -55°C ~ 85°C 12-Lead LCC (3mm x 3mm w/ EP)  
HMC329LC3BTR-R5 Reel 500   3 12 -55°C ~ 85°C 12-Lead LCC (3mm x 3mm w/ EP)  
SPQ:Standard Pack Quantity;MSL:Moisture Sensitivity Level

HMC329LC3B Datasheet(PDF)

HMC329LC3B Datasheet(Picture)

HMC329LC3B Features

  • Passive: no dc bias required
  • Input IP3
    HMC329LC3B: 18 dBm
  • Local oscillator (LO) to radio frequency (RF) isolation
    HMC329LC3B: 38 dBm
  • Wide intermediate frequency (IF) bandwidth (HMC329LC3B): dc to 8 GHz
  • Robust 500 V electrostatic discharge (ESD), Class 1B (HMC329LC3B)
  • 12-Lead ceramic 3 mm × 3 mm SMT package (HMC329LC3B): 9 mm2

HMC329LC3B Applications

  • Microwave point-to-point radios 
  • Point-to-point radios 
  • Point-to-multipoint radios and very small aperture terminal (VSAT)
  • Local multipoint distribution systems (LMDS)
  • Satellite communications (SATCOM)
  • Test equipment and sensors 
  • Military end use
  • RADAR

HMC329LC3B Description

The HMC329 devices are double-balanced MMIC mixers that are available in a chip (HMC329), a leadless RoHS compliant SMT package (HMC329LC3B), and an SMT leadless chip carrier package (HMC329LM3). The HMC329 devices can be used as an upconverter or downconverter. On the HMC329, the mixer is used as an upconverter or downcnverter in a small chip area of 0.85 mm × 0.55 mm. Excellent isolations are provided by on-chip baluns, and the chip requires no external components and no dc bias. Measurements for the HMC329 were made with the chip mounted and ribbon bonded into in a 50 Ω microstrip test fixture that contains 5 mil alumina substrates between the chip and K connectors. Measured data includes the parasitic effects of the assembly. RF connections to the chip were made with 0.076 mm (3 mil) ribbon bond with minimal length less than 0.31 mm (<12 mil).

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