ADRF5422 Datasheet
Die on Carrier, Silicon SPDT Switch, Nonreflective, 100 MHz to 55 GHz
Die on Carrier, Silicon SPDT Switch, Nonreflective, 100 MHz to 55 GHz
| Part No. | In Stock | Price | Packaging | SPQ | Marking | MSL | Pins | Temp Range | Package Description |
| ADRF5422BCZ | 0 | $0 | Wafflepack | 50 | 1 | 0 | -40°C ~ 105°C | CHIPS OR DIE | |
| ADRF5422BCZ-GP | 0 | $0 | Gelpack | 50 | 1 | 0 | -40°C ~ 105°C | CHIPS OR DIE | |
| ADRF5422BCZ-SX | 0 | $0 | Wafflepack | 2 | 1 | 0 | -40°C ~ 105°C | CHIPS OR DIE |
The ADRF5422 is a nonreflective, SPDT switch manufactured in the silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly. The bottom of the device is metalized and connected to ground.
This device operates from 100 MHz to 55 GHz with a typical insertion loss of 3.6 dB and isolation of 38 dB at 55 GHz. The ADRF5422 has an RF input power handling capability of 30 dBm for the through path, 24 dBm for the terminated path, and 30 dBm for the hot switching.
The ADRF5422 requires a positive supply of +3.3 V and a negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.
The ADRF5422 can operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is connected to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance is derated.
The ADRF5422 is designed to match a characteristic impedance of 50 Ω and can operate from −40°C to +105°C.