ADR441-EP Datasheet

• Ultralow voltage noise (0.1 Hz to 10 Hz): 1.2 μV p-p
• Superb temperature drift: 5 ppm/°C
• Low dropout operation (supply voltage headroom): 500 mV
• Supply voltage operating range: 3 V to 18 V
• High output source and sink current
  • +10 mA and −5 mA, respectively

ENHANCED PRODUCT FEATURES

• Supports defense and aerospace applications (AQEC standard)
• Military temperature range (−55°C to +125°C)
• Controlled manufacturing baseline
• 1 assembly/test site
• 1 fabrication site
• Product change notification
• Qualification data available on request

• Precision data acquisition systems
• High resolution data converters
• Battery-powered instrumentation
• Precision instruments
• Military communication
• Unmanned systems
• Avionics

The ADR441-EP1 is a XFET® voltage reference featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., temperature drift curvature correction and extra implanted junction FET (XFET) technology, voltage change vs. temperature nonlinearity in the ADR441-EP is greatly minimized.

The XFET reference offers better noise performance than buried Zener references, and the XFET reference operates off low supply voltage headroom (500 mV). This combination of features makes the ADR441-EP ideally suited for precision signal conversion applications in high end data acquisition systems, military communication, and avionics applications.

The ADR441-EP has the capability to source up to +10 mA of output current and sink up to −5 mA. The device also comes with a trim terminal to adjust the output voltage over a 0.5% range without compromising performance.

The ADR441-EP is available in an 8-lead, narrow SOIC package.The ADR441-EP is specified over the military temperature range of −55°C to +125°C. Additional application and technical information can be found in the ADR441 data sheet.