ADPA1112 Datasheet

• Frequency range: 1GHz to 22GHz
• 50Ω matched input and output
• Power gain: 14dB typical from 8GHz to 16GHz
• P_OUT: 42dBm typical from 8GHz to 16GHz
• PAE: 25% typical from 8GHz to 16GHz
• S21: 20.5dB typical from 8GHz to 16GHz
• OIP3: 44dBm typical from 8GHz to 16GHz
• Integrated RF power detector
• V_DD: 28V
• I_DQ: 600mA

• Electronic warfare
• Test and measurement equipment

The ADPA1112 is a 1GHz to 22GHz wideband power amplifier with a saturated output power (P_OUT) of 42dBm, power added efficiency (PAE) of 25%, and a power gain of 14dB typical from 8GHz to 16GHz at input power (P_IN) of 28.0dBm. The RF input and RF output are internally matched and AC-coupled. A drain bias voltage (V_DD) of 28V is applied to the VDD1 and VDD2 pins, which have integrated bias inductors. The drain current is set by applying a negative voltage to the VGG1 pin. A temperature-compensated RF detector is integrated allowing monitoring of the RF output power.

The ADPA1112 is fabricated on a gallium nitride (GaN) process and is specified for operation from −40°C to +85°C.