ADG613-EP Datasheet

• 1 pC charge injection
• ±0.1 nA maximum at 25°C leakage currents
• 85 Ω on resistance
• Rail-to-rail switching operation
• Fast switching times
• 16-lead TSSOP
• Typical power consumption: ≤11 nW
• TTL-/CMOS-compatible inputs
• V_SS to VDD analog signal range
  • ±2.7 V to ±5.5 V dual supply operation
  • 2.7 V to 5.5 V single-supply operation
• Fully specified at ±5 V, 3 V, and 5 V

ENHANCEDPRODUCT FEATURES

• Supports defense and aerospace applications (AQEC standard)
• Military temperature range: −55°C to +125°C
• Controlled manufacturing baseline
• 1 assembly site
• 1 test site
• 1 fabrication site
• Enhanced product change notification
• Qualification data available on request

• Automatic test equipment
• Data acquisition systems
• Battery-powered systems
• Communications systems
• Sample-and-hold systems
• Audio signal routing
• Relay replacement
• Avionics

The ADG613-EP is a monolithic CMOS device containing four independently selectable switches. This switch offers ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 0.01 nA at 25°C.

The device is fully specified for ±5 V, 5 V, and 3 V supplies. It contains four independent single-pole, single-throw (SPST) switches. The ADG613-EP contains two switches with digital control logic that turns on with logic low and two switches in which the logic is inverted.

Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. The ADG613-EP exhibits break-before-make switching action.

The ADG613-EP is available in a small, 16-lead TSSOP package.

The ADG613-EP is also a TTL-compatible device.

Additional application and technical information can be found in the ADG613 data sheet.

Product Highlights

1. Ultralow charge injection (1 pC typically).
2. Dual ±2.7 V to ±5.5 V or single 2.7 V to 5.5 V operation.
3. Temperature range: −55°C to +125°C.
4. Small, 16-lead TSSOP.