ADG419-EP Datasheet

• 44 V supply maximum ratings
• V_SS to V_DD analog signal range
• Low on resistance: <35 Ω
• Ultralow power dissipation: < 35 μW
• Fast transition time: 160 ns maximum
• Break-before-make switching action
• Plug-in replacement for DG419

Supports defense and aerospace applications (AQEC standard)

• Military temperature range: −55°C to +125°C
• Controlled manufacturing baseline
• One assembly/test site
• One fabrication site
• Enhanced product change notification
• Qualification data available on request

• Precision test equipment
• Precision instrumentation
• Battery-powered systems
• Sample-and-hold systems 

The ADG419-EP is a monolithic CMOS SPDT switch. This switch is fabricated on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage current.

The on resistance profile of the ADG419-EP is very flat over the full analog input range, ensuring excellent linearity and low distortion. The part also exhibits high switching speed and high signal bandwidth. CMOS construction ensures ultralow power dissipation, making the part ideally suited for portable and battery-powered instruments.

Each switch of the ADG419-EP conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. The ADG419-EP exhibits break-before-make switching action.

Full details about this enhanced product are available in the ADG419 data sheet, which should be consulted in conjunction with this data sheet.